发明名称 STORAGE DEVICE, STORAGE ELEMENT
摘要 [Problem] To achieve a storage device that can operate at a higher speed with less current while reductions in the amplitude of readout signals are suppressed. [Solution] A storage device includes a storage element, a wiring section, and a storage control section. The storage element includes a layer structure and is configured such that current can flow therethrough in the stacking direction of the layer structure, said layer structure including at least a storage layer with a magnetization orientation which changes for information, a fixed magnetization layer with a fixed magnetization orientation, and an intermediate layer formed from a non-magnetic material interposed between the storage layer and the magnetization fixing layer. The wiring section supplies current which flows in the stacking direction to the storage element. The storage control section causes standby current at a predetermined level to flow through the wiring section to the storage element so that the magnetization orientation of the storage layer is tilted with respect to a direction perpendicular to the film surface, and then, in this state, causes recording current which is at a greater level than that of the standby current to flow through the wiring section to change the magnetization direction of the storage layer and cause the storage layer to store information.
申请公布号 WO2013171947(A1) 申请公布日期 2013.11.21
申请号 WO2013JP01377 申请日期 2013.03.06
申请人 SONY CORPORATION 发明人 HIGO, YUTAKA;HOSOMI, MASANORI;OHMORI, HIROYUKI;BESSHO, KAZUHIRO;ASAYAMA, TETSUYA;YAMANE, KAZUTAKA;UCHIDA, HIROYUKI
分类号 H01L21/8246;G11C11/15;H01L27/105;H01L29/82;H01L43/08 主分类号 H01L21/8246
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