| 摘要 |
PROBLEM TO BE SOLVED: To provide a detection device which suppresses deterioration of a response characteristic to obtain preferred response characteristic.SOLUTION: A method for manufacturing a detection device in which a plurality of conversion elements 12 comprising an impurity semiconductor layer 125 disposed between a semiconductor layer 124 disposed between a first electrode 122 and a second electrode 126, and the second electrode 126, are arranged on a substrate 100, comprises: a deposition step for depositing a semiconductor film 124', an impurity semiconductor film 123' and a conductive film in this order; a first step for forming a conductive layer 126' in which a part of the conductive film is removed, on the first electrode 122; a second step for forming the semiconductor layer 124 in which a part of the semiconductor film 124' is removed, and the semiconductor layer 125 in which a part of the impurity semiconductor film 123' is removed, on the first electrode 122 through gaps between a plurality of conductive layers 126'; and a third removing step for forming the second electrode 126 by removing a part of the conductive layer 126' positioned outside of the conversion element 12 more than the impurity semiconductor layer 125 formed in the second step. |
