发明名称 Semiconductor Device Including A Silicate Glass Structure and Method of Manufacturing A Semiconductor Device
摘要 A semiconductor device includes a semiconductor body including a first surface. The semiconductor device further includes a continuous silicate glass structure over the first surface. A first part of the continuous glass structure over an active area of the semiconductor body includes a first composition of dopants that differs from a second composition of dopants in a second part of the continuous glass structure over an area of the semiconductor body outside of the active area.
申请公布号 US2013307127(A1) 申请公布日期 2013.11.21
申请号 US201213473231 申请日期 2012.05.16
申请人 SCHULZE HANS-JOACHIM;SUSITI ALEXANDER;ZUNDEL MARKUS;PLOSS REINHARD;INFINEON TECHNOLOGIES AUSTRIA AG 发明人 SCHULZE HANS-JOACHIM;SUSITI ALEXANDER;ZUNDEL MARKUS;PLOSS REINHARD
分类号 H01L29/06;H01L21/311 主分类号 H01L29/06
代理机构 代理人
主权项
地址