发明名称 |
Semiconductor Device Including A Silicate Glass Structure and Method of Manufacturing A Semiconductor Device |
摘要 |
A semiconductor device includes a semiconductor body including a first surface. The semiconductor device further includes a continuous silicate glass structure over the first surface. A first part of the continuous glass structure over an active area of the semiconductor body includes a first composition of dopants that differs from a second composition of dopants in a second part of the continuous glass structure over an area of the semiconductor body outside of the active area.
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申请公布号 |
US2013307127(A1) |
申请公布日期 |
2013.11.21 |
申请号 |
US201213473231 |
申请日期 |
2012.05.16 |
申请人 |
SCHULZE HANS-JOACHIM;SUSITI ALEXANDER;ZUNDEL MARKUS;PLOSS REINHARD;INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
SCHULZE HANS-JOACHIM;SUSITI ALEXANDER;ZUNDEL MARKUS;PLOSS REINHARD |
分类号 |
H01L29/06;H01L21/311 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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