| 摘要 |
A multilayer-stacked phase change memory (PCM) device is provided that includes a substrate that is electrically insulative and thermally conductive, a number (n) of PCM layers deposited on the substrate, where each PCM layer is thicker than a previous PCM layer, a number (n-1) layers of passivation layer deposited between the PCM layers, where the (n) PCM layers, and the (n-1) passivation layers form a stacked multi-layer PCM on the substrate, a first electrode deposited on a first side of the multi-layer PCM stack, and a second electrode deposited on a second side of the multi-layer PCM stack, where the first side is opposite the second side, where charge transport is decoupled by stacking the PCM layers with the pasivation layers.
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