| 摘要 |
A method of selectively etching a three-dimensional (3-D) structure includes generating a plasma in contact with the 3-D structure, and illuminating a designated portion of the 3-D structure with a laser beam while the plasma is being generated. Nonilluminated portions of the 3-D structure are etched at a first etch rate, and the designated portion of the 3-D structure is etched at a second etch rate, where the second etch rate is different from the first etch rate.
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