| 摘要 |
PROBLEM TO BE SOLVED: To provide a package for a high frequency semiconductor which improves the electric power resistance (current capacity) and reduces reflection loss without impairing band characteristics.SOLUTION: A package for a high frequency semiconductor includes: a metal wall 16 disposed on a conductor base plate 200 and including a semiconductor device therein; feed through lower layer parts 20 and feed through upper layer parts 22s which fit in through holes provided at an input/output part of the metal wall and disposed on the conductor base plate; feed through strip lines 19f, each of which is disposed between the feed through lower layer part and the feed through upper layer part and has impedance equal to or lower than characteristic impedance; impedance conversion circuits 19c, each of which is disposed at the exterior of the metal wall and converts the characteristic impedance into impedance of the feed through strip line; and leads 21 connected with the impedance conversion circuits. |
