SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with stable characteristics and improved channel mobility by improving adhesion of an electrode containing aluminium to an interlaminar insulation film, and a method for manufacturing the same.SOLUTION: A MOSFET 1 comprises: a substrate 10; a gate insulation film 20; a gate electrode 30; an interlaminar insulation film 40; a buffer film 51 containing Ti and N and not containing Al; and a source electrode 52 containing Ti, Al and Si. A contact hole 80 passing through the interlaminar insulation film 40 is formed separately from the gate electrode 30 in the MOSFET 1. The gate insulation film 20 is formed on a main surface 10A of the substrate 10 composed of a plane in which off-angle for {0001} plane is equal to or more than 50° and is equal to or less than 65°. The buffer film 51 is formed so as to come into contact with a side wall surface 80A of the contact hole 80. The source electrode 52 is formed so as to come into contact with the buffer film 51 and the main surface 10A of the substrate 10.