发明名称 Hall Effect Device
摘要 Embodiments of the present invention provide a Hall effect device that includes a Hall effect region of a first semiconductive type, at least three contacts and a lateral conductive structure. The Hall effect region is formed in or on top of a substrate, wherein the substrate includes an isolation arrangement to isolate the Hall effect region in a lateral direction and in a depth direction from the substrate or other electronic devices in the substrate. The at least three contacts are arranged at a top of the Hall effect region to supply the Hall effect device with electric energy and to provide a Hall effect signal indicative of the magnetic field, wherein the Hall effect signal is generated in a portion of the Hall effect region defined by the at least three contacts. The lateral conductive structure is located between the Hall effect region and the isolation arrangement.
申请公布号 US2013307609(A1) 申请公布日期 2013.11.21
申请号 US201213472012 申请日期 2012.05.15
申请人 AUSSERLECHNER UDO;INFINEON TECHNOLOGIES AG 发明人 AUSSERLECHNER UDO
分类号 H03K17/90;H01L43/04;H01L43/14 主分类号 H03K17/90
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