发明名称 |
Embedded 3D Interposer Structure |
摘要 |
A device includes an interposer, which includes a substrate; and at least one dielectric layer over the substrate. A plurality of through-substrate vias (TSVs) penetrate through the substrate. A first metal bump is in the at least one dielectric layer and electrically coupled to the plurality of TSVs. A second metal bump is over the at least one dielectric layer. A die is embedded in the at least one dielectric layer and bonded to the first metal bump.
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申请公布号 |
US2013309813(A1) |
申请公布日期 |
2013.11.21 |
申请号 |
US201313867831 |
申请日期 |
2013.04.22 |
申请人 |
COMPANY LTD. TAIWAN SEMICONDUCTOR MANUFACTURING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
SHIH YING-CHING;LIN JING-CHENG;CHIOU WEN-CHIH;JENG SHIN-PUU;YU CHEN-HUA |
分类号 |
H01L21/768;H01L21/56 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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