发明名称 Embedded 3D Interposer Structure
摘要 A device includes an interposer, which includes a substrate; and at least one dielectric layer over the substrate. A plurality of through-substrate vias (TSVs) penetrate through the substrate. A first metal bump is in the at least one dielectric layer and electrically coupled to the plurality of TSVs. A second metal bump is over the at least one dielectric layer. A die is embedded in the at least one dielectric layer and bonded to the first metal bump.
申请公布号 US2013309813(A1) 申请公布日期 2013.11.21
申请号 US201313867831 申请日期 2013.04.22
申请人 COMPANY LTD. TAIWAN SEMICONDUCTOR MANUFACTURING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 SHIH YING-CHING;LIN JING-CHENG;CHIOU WEN-CHIH;JENG SHIN-PUU;YU CHEN-HUA
分类号 H01L21/768;H01L21/56 主分类号 H01L21/768
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