发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICE |
摘要 |
A silicon carbide substrate includes a first layer of a first conductivity type, a second layer of a second conductivity type provided on the first layer, and a third layer provided on the second layer and doped with an impurity for providing the first conductivity type. The silicon carbide substrate has a trench formed through the third layer and the second layer to reach the first layer. The first layer has a concentration peak of the impurity in a position away from the trench in the first layer. As a result, a silicon carbide semiconductor device having an electric field relaxation structure that can be readily formed is provided.
|
申请公布号 |
US2013306986(A1) |
申请公布日期 |
2013.11.21 |
申请号 |
US201313863043 |
申请日期 |
2013.04.15 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
WADA KEIJI;HIYOSHI TORU;MASUDA TAKEYOSHI |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|