METHOD FOR FORMING TRANSPARENT ELECTRODE AND SEMICONDUCTOR DEVICE MANUFACTURED USING SAME
摘要
The present invention provides a method for forming a transparent electrode and a semiconductor device having the transparent electrode formed thereon by using the same. The present invention enables: a transparent electrode to be formed from a transparent material in which a resistance state is changed from a high resistant state to a low resistant state by an applied electric field; and the transparent electrode to have conductivity by carrying out a forming step of applying a voltage to the transparent electrode and changing the resistant state of the transparent electrode to the low resistant state, thereby forming a semiconductor layer on the lower part or the upper part of the transparent electrode and forming the transparent electrode which exhibits good ohmic characteristics and high permeability relative to light in a short-wavelength UV region in addition to a visible ray region.
申请公布号
WO2013172511(A1)
申请公布日期
2013.11.21
申请号
WO2012KR07254
申请日期
2012.09.10
申请人
KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION;KIM, TAE GEUN;KIM, HEE-DONG