发明名称 MOS CAPACITORS WITH A FINFET PROCESS
摘要 Capacitors include a first electrical terminal that has fins formed from doped semiconductor on a top layer of doped semiconductor on a semiconductor-on-insulator substrate; a second electrical terminal that has an undoped material having bottom surface shape that is complementary to the first electrical terminal, such that an interface area between the first electrical terminal and the second electrical terminal is larger than a capacitor footprint; and a dielectric layer separating the first and second electrical terminals.
申请公布号 US2013307043(A1) 申请公布日期 2013.11.21
申请号 US201213476567 申请日期 2012.05.21
申请人 CHENG KANGGUO;HARAN BALASUBRAMANIAN S.;PONOTH SHOM;STANDAERT THEODORUS E.;YAMASHITA TENKO;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CHENG KANGGUO;HARAN BALASUBRAMANIAN S.;PONOTH SHOM;STANDAERT THEODORUS E.;YAMASHITA TENKO
分类号 H01L27/088;H01L29/02 主分类号 H01L27/088
代理机构 代理人
主权项
地址
您可能感兴趣的专利