发明名称 |
MOS CAPACITORS WITH A FINFET PROCESS |
摘要 |
Capacitors include a first electrical terminal that has fins formed from doped semiconductor on a top layer of doped semiconductor on a semiconductor-on-insulator substrate; a second electrical terminal that has an undoped material having bottom surface shape that is complementary to the first electrical terminal, such that an interface area between the first electrical terminal and the second electrical terminal is larger than a capacitor footprint; and a dielectric layer separating the first and second electrical terminals. |
申请公布号 |
US2013307043(A1) |
申请公布日期 |
2013.11.21 |
申请号 |
US201213476567 |
申请日期 |
2012.05.21 |
申请人 |
CHENG KANGGUO;HARAN BALASUBRAMANIAN S.;PONOTH SHOM;STANDAERT THEODORUS E.;YAMASHITA TENKO;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;HARAN BALASUBRAMANIAN S.;PONOTH SHOM;STANDAERT THEODORUS E.;YAMASHITA TENKO |
分类号 |
H01L27/088;H01L29/02 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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