发明名称 REFLECTION CURVED MIRROR STRUCTURE OF A VERTICAL LIGHT-EMITTING DIODE
摘要 A reflection curved mirror structure is applied to a vertical light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer is a filler. The filler is located right below the N-type electrode to form a protruding curved surface facing the light-emitting layer. The mirror layer forms a mirror structure along the protruding curved surface. With reflection provided by the mirror structure, excited light from the light-emitting layer is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency.
申请公布号 US2013307009(A1) 申请公布日期 2013.11.21
申请号 US201313938875 申请日期 2013.07.10
申请人 HIGH POWER OPTO. INC. 发明人 CHEN FU-BANG;YEN WEI-YU;CHOU LI-PING;TSENG WEI-CHUN;CHANG CHIH-SUNG
分类号 H01L33/58 主分类号 H01L33/58
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