| 摘要 |
The present invention relates to a charged particle lithography system. The system has a beamlet generator including a beam generator for generating a charged particle beam and an aperture array (6) for forming a plurality of beamlets from the charged particle beam, and a beamlet projector for projecting the beamlets onto a target surface. The charged particle beam generator includes a charged particle source (3) for generating a diverging charged particle beam, a collimator system (5a, 5b, 5c), one or more pumps (220), a high voltage shielding arrangement (201) for shielding components outside the high voltage shielding arrangement from high voltages within the high voltage shielding arrangement, and a cooling arrangement (203, 204) for removing heat. The one or more pumps are located between the high voltage shielding arrangement and the cooling arrangement. |
