发明名称 |
MICROELECTRONIC PACKAGE UTILIZING MULTIPLE BUMPLESS BUILD-UP STRUCTURES AND THROUGH-SILICON VIAS |
摘要 |
A microelectronic package having a first bumpless build-up layer structure adjacent an active surface and sides of a microelectronic device and a second bumpless build-up layer structure adjacent a back surface of the microelectronic device, wherein conductive routes are formed through the first bumpless build-up layer from the microelectronic device active surface to conductive routes in the second bumpless build-up layer structure and wherein through-silicon vias adjacent the microelectronic device back surface and extending into the microelectronic device are electrically connected to the second bumpless build-up layer structure conductive routes. |
申请公布号 |
WO2013172814(A1) |
申请公布日期 |
2013.11.21 |
申请号 |
WO2012US37787 |
申请日期 |
2012.05.14 |
申请人 |
INTEL CORPORATION;GOH, ENG HUAT;TEOH, HOAY TIEN |
发明人 |
GOH, ENG HUAT;TEOH, HOAY TIEN |
分类号 |
H01L23/48;H01L25/065 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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