| 摘要 |
<p>Provided are an oxide thin film transistor and manufacturing method thereof, array substrate and display device, the oxide thin film transistor comprising a substrate (100), a source electrode (104-2), a drain electrode (104-1), an activation layer (103), and a passivation layer (105); the source electrode, the drain electrode, the activation layer, and the passivation layer are disposed on the substrate; the source electrode and the drain electrode are provided with a grooved area therebetween; and the passivation layer directly contacts the activation layer at least in the groove area. By this, the present invention avoids the damage to the activation layer, or the drain electrode and the source electrode of the oxide thin film transistor caused by an etched barrier layer in the manufacturing process of the oxide thin film transistor.</p> |
