发明名称 |
PIXEL STRUCTURE, DOUBLE-GATE PIXEL STRUCTURE, AND DISPLAY DEVICE |
摘要 |
Disclosed are a pixel structure, a double-gate pixel structure, and a display device. The pixel structure comprises a thin film transistor, a passivation layer above the thin film transistor, an upper layer pixel electrode above the passivation layer, a lower layer pixel electrode below a gate insulation film of the thin film transistor, and a common voltage wire between the passivation layer and the gate insulation film. The common voltage wire at least partially overlaps the lower layer pixel electrode and the upper layer pixel electrode, with the gate insulation layer and the passivation layer located therebetween respectively, so as to form storage capacitor. |
申请公布号 |
WO2013170657(A1) |
申请公布日期 |
2013.11.21 |
申请号 |
WO2013CN72762 |
申请日期 |
2013.03.15 |
申请人 |
BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
WANG, SHIJUN;XUE, HAILIN;CHE, CHUNCHENG |
分类号 |
G02F1/1362 |
主分类号 |
G02F1/1362 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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