| 摘要 |
<p>Provided is a fabrication method for a flash memory, comprising: firstly providing a semiconductor substrate of a first conduction type, forming a shallow trench isolation in the semiconductor substrate, and forming on the semiconductor substrate a wall-like gate structure comprising a control gate, a barrier oxidation layer, a floating gate and a tunnelling oxidation layer; afterwards, before implanting ions to form a self-aligned source region, baking a photoresist which has been spin coated with UV to reduce the stress of the photoresist; and after removing the photoresist, implanting ions into the semiconductor substrate to form a source/drain region and fabricating an electrical connection. By adding a UV baking step for a photoresist, the present invention effectively reduces the stressing of pushing a multilayer gate structure outwardly by the photoresist therebetween, and in the case of not apparently increasing the cost, effectively avoids the phenomenon of collapse of a control gate in the gate structure during the removal of the photoresist, increases the fabrication yield of products, and further improves the gains.</p> |
