发明名称 |
Method for preparing nanocrystalline silicon in SiO2 and freestanding silicon nanoparticles |
摘要 |
<p>Methods for preparing nanocrystalline-Si/SiO2 composites by treating hydrogen silsesquioxane (HSQ) under reductive thermal curing conditions are described. Also described are methods of preparing silicon nanoparticles by acid etching the nanocrystalline-Si/SiO2 composites.</p> |
申请公布号 |
KR101331435(B1) |
申请公布日期 |
2013.11.21 |
申请号 |
KR20077030558 |
申请日期 |
2006.05.26 |
申请人 |
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发明人 |
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分类号 |
B82B3/00;B82Y40/00;H01L21/20;H01L21/205 |
主分类号 |
B82B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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