| 摘要 |
PROBLEM TO BE SOLVED: To provide a display device which uses an oxide semiconductor inhibiting characteristic fluctuations caused by heat treatment, and to provide a manufacturing method of the display device.SOLUTION: According to one embodiment, a manufacturing method of a display device including an insulation layer, a gate electrode, a gate insulation film, an oxide layer, a channel protection layer, a source electrode and a drain electrode, an optical element, and a passivation film is provided. The oxide layer including a first portion and a second portion is formed on the gate insulation film. The channel protection layer is formed on a part of the first portion, and the source electrode and the drain electrode are formed on the first portion, being separated from each other so as to sandwich the channel protection layer therebetween. The passivation film covering the source electrode, the drain electrode, the channel protection layer, and the second portion is formed. A portion of the passivation film, which covers the second portion, is removed, and the optical element is formed on the second portion. |
