| 摘要 |
PROBLEM TO BE SOLVED: To provide: an SOI substrate suitable for a TFT and a method of fabricating the same; and a semiconductor device with high reliability using the SOI substrate and a method of fabricating the same.SOLUTION: When an SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. In such an SOI substrate, adhesion between a buried insulating layer as an underlayer and a single crystal silicon layer is high, and it becomes possible to realize a semiconductor device with high reliability. |
