| 摘要 |
Disclosed is a nonvolatile memory device which includes a nonvolatile memory including a plurality of LSB and MSB pages at a plurality of wordlines; and a controller controlling the nonvolatile memory. The controller controls the nonvolatile memory such that an LSB program operation on a first wordline (first LSB page) of the plurality of wordlines is programmed and then an LSB program operation on a second wordline of the plurality of wordlines (second LSB page) is programmed. When the LSB program operation on the second wordline (second LSB page) is performed, the nonvolatile memory stores information about LSB data programmed at the first wordline (first LSB page) at a spare area of the second wordline (second LSB page).
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