发明名称 |
Sintered Polycrystalline Silicon-based Thermoelectrics |
摘要 |
Methods and processes to fabricate thermoelectric materials and more particularly to methods and processes to fabricate doped silicon-based semiconductive materials to use as thermoelectrics in the production of electricity from recovered waste heat. Silicon metal particulates, extracting liquid, and dopant are combined into a mixture and milled. Substantially oxidant-free and doped silicon metal particulates are recovered and sintered to form a porous polycrystalline silicon-based thermoelectric material.
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申请公布号 |
US2013307200(A1) |
申请公布日期 |
2013.11.21 |
申请号 |
US201213667623 |
申请日期 |
2012.11.02 |
申请人 |
CARBERRY JOHN;WERESZCZAK ANDREW A. |
发明人 |
CARBERRY JOHN;WERESZCZAK ANDREW A. |
分类号 |
C04B35/64 |
主分类号 |
C04B35/64 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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