发明名称 Sintered Polycrystalline Silicon-based Thermoelectrics
摘要 Methods and processes to fabricate thermoelectric materials and more particularly to methods and processes to fabricate doped silicon-based semiconductive materials to use as thermoelectrics in the production of electricity from recovered waste heat. Silicon metal particulates, extracting liquid, and dopant are combined into a mixture and milled. Substantially oxidant-free and doped silicon metal particulates are recovered and sintered to form a porous polycrystalline silicon-based thermoelectric material.
申请公布号 US2013307200(A1) 申请公布日期 2013.11.21
申请号 US201213667623 申请日期 2012.11.02
申请人 CARBERRY JOHN;WERESZCZAK ANDREW A. 发明人 CARBERRY JOHN;WERESZCZAK ANDREW A.
分类号 C04B35/64 主分类号 C04B35/64
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