发明名称 |
BONDING WIRE FOR SEMICONDUCTOR |
摘要 |
There is provided a bonding wire for semiconductor, capable of ensuring a favorable wedge bondability even when bonded to a palladium-plated lead frame, superior in oxidation resistivity and having a core wire of copper or a copper alloy. This bonding wire comprises: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer, such alloy layer containing a noble metal and palladium and having a thickness of 1 to 80 nm. The aforementioned noble metal is either silver or metal, and a concentration of such noble metal in the alloy layer is not less than 10% and not more than 75% by volume.
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申请公布号 |
US2013306352(A2) |
申请公布日期 |
2013.11.21 |
申请号 |
US201013384819 |
申请日期 |
2010.07.16 |
申请人 |
TERASHIMA SHINICHI;UNO TOMOHIRO;YAMADA TAKASHI;ODA DAIZO;NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.;NIPPON MICROMETAL CORPORATION |
发明人 |
TERASHIMA SHINICHI;UNO TOMOHIRO;YAMADA TAKASHI;ODA DAIZO |
分类号 |
H01B5/00 |
主分类号 |
H01B5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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