INFRARED SENSOR DEVICE AND METHOD FOR PRODUCING AN INFRARED SENSOR DEVICE

摘要

The invention relates to an infrared sensor device which comprises at least one sensor element formed in a semiconductor substrate, a gap being provided in an SOI wafer below and around the sensor element; and to a suspension means by which the sensor element is suspended in the SOI wafer. The infrared sensor device is characterized in that the sensor element is substantially arranged below the suspension device. In this way, a high sensitivity, low thermal capacity, low thermal coupling to the substrate and thus a high image refresh rate can be achieved.