发明名称 |
SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE |
摘要 |
A GaN-based semiconductor is epitaxially grown on a silicon substrate with a surface orientation of (111). The difference between the lattice constant of the GaN and the silicon (111) surface is approximately 17%, which is quite large. Therefore, the dislocation density of the grown GaN exceeds 1010 cm-2. Screw dislocation density causes the leak current of the transistor using GaN to increases. Furthermore, the mobility of the transistor is reduced. Provided is a semiconductor substrate comprising a silicon substrate and a nitride semiconductor layer that is epitaxially grown on a (150) surface of the silicon substrate. |
申请公布号 |
US2013306979(A1) |
申请公布日期 |
2013.11.21 |
申请号 |
US201313952649 |
申请日期 |
2013.07.28 |
申请人 |
ADVANCED POWER DEVICE RESEARCH ASSOCIATION |
发明人 |
IWAMI MASAYUKI;KOKAWA TAKUYA |
分类号 |
H01L29/20;H01L21/02 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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