发明名称 Method for correcting wavefront reflected from mirror for microlithography projection exposure system having projection optics, involves correcting wavefront by removing layer of multi-layer coating in one selected portion
摘要 <p>The method involves correcting (47) a wavefront by removing a layer of multi-layer coating in one selected portion, where the layer in the selected portion is removed by introduction of local hydrogen in one silicon containing layer of the multi-layer coating. A barrier layer is deposited on the multi-layer coating in the partial region after removing one layer in the selected portion. The material of the barrier layer is selected from the group consisting of carbon, boron carbide and silicon nitride. An independent claim is included for a mirror for a microlithography projection exposure system.</p>
申请公布号 DE102012223669(A1) 申请公布日期 2013.11.21
申请号 DE201210223669 申请日期 2012.12.19
申请人 CARL ZEISS SMT GMBH 发明人 BLANCKENHAGEN, GISELA VON;WEISER, MARTIN
分类号 G02B5/08;G02B1/10;G03F7/20 主分类号 G02B5/08
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