发明名称 THROUGH WAFER VIA AND METHOD OF MAKING SAME
摘要 <p>A through wafer via structure. The structure includes: a semiconductor substrate having a top surface and an opposite bottom surface; and an array of through wafer vias comprising at least one electrically conductive through wafer via and at least one electrically non-conductive through wafer via, each through wafer via of the array of through wafer vias extending from the top surface of the substrate to between greater than halfway to and all the way to the bottom surface of the substrate. Also methods for fabricating the though wafer via structure.</p>
申请公布号 KR101332116(B1) 申请公布日期 2013.11.21
申请号 KR20117000833 申请日期 2009.07.22
申请人 发明人
分类号 H01L21/28;H01L23/12 主分类号 H01L21/28
代理机构 代理人
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