Method for producing a substrate with various active areas and planar and three-dimensional transistors

摘要

The method involves arranging a protective mask between a semi-conductor material layer (2) and a first etching mask, and passing an insulation pattern (4) through the semi-conductor material layer. Lateral spacers are formed on lateral surfaces of the etching mask so as to form a second etching mask. The semi-conductor material layer is etched by the second etching mask so as to form a pattern made from semi-conductor material in an area, where another area of the semi-conductor material layer is protected by a third etching mask (1).