| 摘要 |
The invention relates to a micromechanical pressure sensor (1) and to a method for producing same, wherein the pressure sensor comprises a membrane (3) which is formed in a first semiconductor layer (2), and a sacrificial layer (4) to which the semiconductor layer (2) is applied. In the membrane (3), a drain region (7) and a source region (8) are present, which face each other and which are separated from each other by a conducting channel (12), wherein the sacrificial layer (4) forms an insulation layer (4) beneath which an additional layer (5) with a gate electrode (6) is provided, which is located opposite the conducting channel (12). A cavity (9) is formed in the insulation layer (4) between the additional layer (5) and the membrane (3), into which cavity the membrane can move when pressure is applied to the pressure sensor. The invention further relates to a method for measuring pressure.
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