| 摘要 |
A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition comprises a microwave generator 6 configured to generate microwaves at a frequency f, a plasma chamber 2 comprising a base, a top plate, and a side wall extending from the base to the top plate defining a resonance cavity for supporting a microwave resonance mode, a microwave coupling configuration 10 for feeding microwaves from the generator into the chamber, a gas flow system 12, 14 for feeding process gases into the chamber and removing them therefrom, and a substrate holder 4 disposed in the chamber. The resonance cavity has a central rotational axis of symmetry extending from the base to the top plate mounted across the axis, a height h from the base to the top plate that supports a TM011 resonant mode at the frequency f, and a diameter d measured at a position less than 50% of the height of the cavity such that a ratio of the height of the cavity to the diameter is in the range 0.3 to 1.0. Also disclosed is a reactor having a resonance cavity that supports a TM011 resonant mode at a frequency in the range 400 to 500, 800 to 100, or 2300 to 2600 MHz, and a method of manufacturing synthetic diamond material using the reactors of the invention. |
