| 摘要 |
<p>An embodiment method for forming an image sensor includes a step for forming an anti-reflective coating on the surface of semiconductor supporting a photodiode; a step for forming the anti-reflective coating, a step for forming an etching stop layer on the anti-reflective coating; a step for forming buffer oxide on the etching stop layer, and a step for selectively removing a part of the buffer oxide by etching. The etching stop layer protects the anti-reflective coating during the etching. The image sensor of the embodiment is a semiconductor arranged in an array region and a peripheral region. The semiconductor supporting the photodiode in the array region includes the semiconductor; an anti-reflective coating arranged on the surface of the semiconductor; the etching stop layer, an etching stop layer arranged on the anti-reflective coating, of which thickness on the photodiode of the array region is smaller than the thickness of the etching stop layer; and buffer oxide arranged on the etching stop layer of the peripheral region. [Reference numerals] (10) Chip;(12) Pixel;(14) Array region;(16) Peripheral region</p> |
