| 摘要 |
FIELD: electricity.SUBSTANCE: in a multibarrier heterostructure for generation of powerful electromagnet radiation of subterahertz and terahertz frequency ranges, representing a multilayer heterostructure from alternating layers of narrow-zone and wide-zone semiconductors, where the layer of the wide-zone semiconductor is an energy barrier ?Efor electrons from the narrow-zone layer, according to the invention, thicknesses d of heterolayers are selected from the conditionwhere D - coefficient of electron diffusion, and ? - time of relaxation of excessive thermal energy of electrons into a lattice; wide-zone (barrier) layers are not alloyed, and concentration of donors Nin narrow-zone layers meets the condition of 10cm?N?10cm; height of energy barrier ?E>6kT; quantity of alternating pairs of narrow-zone and wide-zone layers is n>4. Besides, the material of the wide-zone barrier layer in the first pair differs from all other, subsequent ones, and providing for lower height of the first energy barrier compared to the subsequent ones.EFFECT: increased capacity and expanded frequency range of compact generators of terahertz radiation.2 cl, 3 dwg |
