发明名称 |
Photomask Blank, Method For Manufacturing Photomask, And Method For Manufacturing Phase Shift Mask |
摘要 |
<p>A light-shielding film 2 formed on a transparent substrate 1 has a monolayer structure or a multilayer structure. At least one layer is formed by film-formation with a chromium-containing material including tin. The light-shielding film 2 has an optical density of 2 or higher and 4 or lower and has a reflection-preventing function. The layer made of a chromium-containing material including tin, which constitutes the light-shielding film 2, can cause a significant increase in the etching rate at the time of chlorine-containing dry etching including oxygen. Thus, burden on the resist pattern or hard mask pattern at the time of transferring a pattern on the light-shielding film is reduced, and therefore it is possible to carry out pattern transfer with high precision.</p> |
申请公布号 |
EP2664960(A1) |
申请公布日期 |
2013.11.20 |
申请号 |
EP20130167562 |
申请日期 |
2013.05.13 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
FUKAYA, SOUICHI;NAKAGAWA, HIDEO;SASAMOTO, KOUHEI |
分类号 |
G03F1/30;G03F1/54;G03F1/80 |
主分类号 |
G03F1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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