SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
摘要
<p>The present invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device is formed at a substrate and comprises an interlayer insulating film including a trench; a gate insulating film formed in the trench; a work function controlling film formed along the floor and side wall of the trench on the gate insulating film in the trench and including an inclined plane having an acute angle for the side wall of the trench; and a metal gate pattern filling the trench on the work function controlling film in the trench.</p>
