METHOD FOR FORMING WIRING, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

The present invention provides a wire, which is having an adjusted shape, utilized a conductive layer which is containing copper. Further, the present invention provides a transistor having an electrode having a layer which is the same with the wire. Further, the present invention provides a semiconductor device having the transistor and the wire. The first conductive layer having the taper angle of 15° to 45° is formed at a stacked layer having a first conductive layer containing the copper and a second conductive layer on the first conductive layer by forming a resist mask on the second conductive layer and eliminating the part of the second conductive layer and the part of the first conductive layer using the resist mask as a mask before eliminating the resist mask.