| 发明名称 |
COMPOSITION FOR FORMING p-TYPE DIFFUSION LAYER, METHOD OF PRODUCING SILICON SUBSTRATE HAVING p-TYPE DIFFUSION LAYER, METHOD FOR PRODUCING PHOTOVOLTAIC CELL , AND PHOTOVOLTAIC CELL |
| 摘要 |
<p>The invention provides a composition for forming a p-type diffusion layer, the composition comprising boron nitride, a dispersion medium and an inorganic binder.</p> |
| 申请公布号 |
EP2665089(A1) |
申请公布日期 |
2013.11.20 |
| 申请号 |
EP20120734324 |
申请日期 |
2012.01.11 |
| 申请人 |
HITACHI CHEMICAL COMPANY, LTD. |
发明人 |
ORITA, AKIHIRO;YOSHIDA, MASATO;NOJIRI, TAKESHI;MACHII, YOICHI;IWAMURO, MITSUNORI;KIZAWA, KEIKO;ADACHI, SHUICHIRO;SATO, TETSUYA |
| 分类号 |
H01L21/22;H01L21/225;H01L21/228;H01L31/18 |
主分类号 |
H01L21/22 |
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