| 发明名称 |
METHOD FOR APPLYING A ZN(S, O) BUFFER LAYER TO A SEMICONDUCTOR SUBSTRATE BY CHEMICAL BATH DEPOSITION |
| 摘要 |
<p>In order to increase the deposition speed of a Zn(S, O) buffer layer by way of a modified CBD method, hydrogen peroxide in a concentration of up to 5% is added as an additive.</p> |
| 申请公布号 |
EP2411558(B1) |
申请公布日期 |
2013.11.20 |
| 申请号 |
EP20100716273 |
申请日期 |
2010.03.23 |
| 申请人 |
HELMHOLTZ-ZENTRUM BERLIN FUER MATERIALIEN UND ENERGIE GMBH |
发明人 |
ENNAOUI, AHMED;SAEZ-ARAOZ, RODRIGO;FLORIAN, TIMO;LUX-STEINER, MARTHA CHRISTINA |
| 分类号 |
C23C18/12;H01L21/368;H01L31/18 |
主分类号 |
C23C18/12 |
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