APPARATUS FOR FABRICATING SILICON SYNGLE CRYSTAL INGOT AND METHOD FOR FABRICATING SILICON SYNGLE INGOT

摘要

PURPOSE: An apparatus for manufacturing a silicon single crystal ingot and a manufacturing method for the same are provided to uniformly control oxygen concentration between lattices in the single crystal ingot by providing oxygen interstitials to the single crystal ingot through a microelement supply part. CONSTITUTION: A quartz crucible(20) receives a silicon melt(62). A lifting device(30) lifts a silicon epitaxial ingot(60) grown from the silicon melt. A heat shield(40) shields heat emitted from the silicon single crystal ingot. One or more microelement supply parts(50) are placed at a lower portion of the heat shield. The microelement supply part is formed into a cylindrical shape.