| 摘要 |
<p>Provided is a resin composition for photoresist wherein each of sensitivity, pattern layout, resolution and residue film property is well balanced. The composition comprises: a high ortho novolac type phenolic resin with ate least 23 竊�of orthofication rate, which can be obtained by reacting phenols including meta-cresol, paracresol, and 2,5-xylenol with aldehydes under the presence of an acid catalyst and under the temperature condition of 110-220 inclusive; a naphthoquinone diazide derivative; and a solvent.</p> |
