SEMICONDUCTOR DEVICE

摘要

A semiconductor device according to the present invention comprises a base substrate; a first nitride semiconductor layer formed on the base substrate; a second nitride semiconductor layer formed on the first nitride substrate; a cathode electrode formed at one side of the second nitride semiconductor layer; an anode electrode having one end and the other end wherein the one end is recessed to a predetermined depth at the other side of the second nitride semiconductor layer and the other end is separated from the cathode electrode and extended to the upper part of the cathode electrode; and an insulating film formed to cover the cathode electrode on the second nitride semiconductor layer between the anode electrode and the cathode electrode.