CHEMICAL MECHANICAL POLISHING COMPOSITION HAVING CHEMICAL ADDITIVES AND METHODS FOR USING SAME

摘要

The present invention relates to a chemical-mechanical polishing (CMP) composition with chemical additives and a method for using the CMP composition. The CMP composition comprises: an abrasive; a chemical additive; a liquid carrier; an arbitrary oxidant; a pH buffer agent and salt; and a surfactant and a biocide. The CMP composition and a method for using the same provide: an improved removal ratio about SiC films, SiC films and SiCxNy films; and an improved adjustable selectivity about SiC on SiO2, SiC on SiN or SiCxNy on SiO2 (here, x is in a range of 0.1-55 wt%, and y is in a range of 0.1-32 wt%). [Reference numerals] (AA) Removal rate (angstrom/min);(BB) Abrasive only;(CC) Abrasive + HEPES polishing composition;(DD) Abrasive + ACES;(EE) Silicon dioxide (TEOS)