| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor substrate superior in flatness without a work-affected layer by adding operation for electrochemically oxidizing a substrate surface to double-sided polishing. <P>SOLUTION: A double-sided polishing device having superior flatness is configured to apply a voltage between an upper plate and a lower plate. Positive potential can be applied to one of substrate surfaces and negative potential to the other surface. Double-sided polishing is performed while the voltage is applied. An oxide film is removed while anodic oxidation is applied at a positive potential-side to form an oxide film. The work-affected layer on the surface of the substrate is efficiently removed. Thus, the useful semiconductor substrate can be formed on the industrial application of sufficient flatness and without the work-affected layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
