发明名称 |
Memory circuits, systems, and modules for performing DRAM refresh operations and methods of operating the same |
摘要 |
A memory module can include a plurality of dynamic memory devices that each can include a dynamic memory cell array with respective regions therein, where the plurality of dynamic memory devices can be configured to operate the respective regions responsive to a command. A DRAM management unit can be on the module and coupled to the plurality of dynamic memory devices, and can include a memory device operational parameter storage circuit that is configured to store memory device operational parameters for the respective regions to affect operation of the respective regions responsive to the command.
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申请公布号 |
US8588017(B2) |
申请公布日期 |
2013.11.19 |
申请号 |
US201113236972 |
申请日期 |
2011.09.20 |
申请人 |
PARK CHUL-WOO;JUN YOUNG-HYUN;CHOI JOO-SUN;HWANG HONG-SUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK CHUL-WOO;JUN YOUNG-HYUN;CHOI JOO-SUN;HWANG HONG-SUN |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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