发明名称 |
Hybrid double box back gate silicon-on-insulator wafers with enhanced mobility channels |
摘要 |
A semiconductor wafer structure for integrated circuit devices includes a bulk substrate; a lower insulating layer formed on the bulk substrate; an electrically conductive back gate layer formed on the lower insulating layer; an upper insulating layer formed on the back gate layer; and a hybrid semiconductor-on-insulator layer formed on the upper insulating layer, the hybrid semiconductor-on-insulator layer comprising a first portion having a first crystal orientation and a second portion having a second crystal orientation.
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申请公布号 |
US8587063(B2) |
申请公布日期 |
2013.11.19 |
申请号 |
US20090613574 |
申请日期 |
2009.11.06 |
申请人 |
DENNARD ROBERT H.;OUYANG QIQING C.;YAU JENG-BANG;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DENNARD ROBERT H.;OUYANG QIQING C.;YAU JENG-BANG |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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