发明名称 |
Capacitor for semiconductor device and manufacturing method of capacitor for semiconductor device |
摘要 |
Disclosed are a capacitor for a semiconductor device and a manufacturing method thereof. The capacitor includes a second oxide layer filling a first trench in a semiconductor substrate; second and third trenches in an active region at opposing sides of the second oxide layer in the first trench; a third oxide layer on the semiconductor substrate and on inner surfaces of the second and third trenches; and a polysilicon layer on the third oxide layer to fill the second and third trenches.
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申请公布号 |
US8587048(B2) |
申请公布日期 |
2013.11.19 |
申请号 |
US20100965261 |
申请日期 |
2010.12.10 |
申请人 |
PARK DONG HOON;JUNG JIN HYO;KO MIN KYUNG;DONGBU HITEK CO., LTD. |
发明人 |
PARK DONG HOON;JUNG JIN HYO;KO MIN KYUNG |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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