| 摘要 |
A semiconductor memory device includes: a strobe clock generator configured to generate a strobe clock signal having a delay time controlled according to a plurality of test mode signals which are selectively enabled in response to a read signal or write signal; an internal address generator configured to latch an address in response to a first level of the strobe clock signal, and generate an internal address by decoding the address in response to a second level of the strobe clock signal; and an output enable signal generator configured to decode the internal address and generate output enable signals which are selectively enabled.
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