发明名称 |
Semiconductor device having low dielectric insulating film and manufacturing method of the same |
摘要 |
A semiconductor device includes a semiconductor substrate on which a structure portion is provided except a peripheral portion thereof, and has a laminated structure including low dielectric films and wiring lines, the low dielectric films having a relative dielectric constant of 3.0 or lower and a glass transition temperature of 400° C. or higher. An insulating film is formed on the structure portion. A connection pad portion is arranged on the insulating film and connected to an uppermost wiring line of the laminated structure portion. A bump electrode is provided on the connection pad portion. A sealing film made of an organic resin is provided on a part of the insulating film which surrounds the pump electrode. Side surfaces of the laminated structure portion are covered with the insulating film and/or the sealing film.
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申请公布号 |
US8587124(B2) |
申请公布日期 |
2013.11.19 |
申请号 |
US20080156822 |
申请日期 |
2008.06.04 |
申请人 |
MIZUSAWA AIKO;OKADA OSAMU;WAKABAYASHI TAKESHI;MIHARA ICHIRO;TERAMIKROS, INC. |
发明人 |
MIZUSAWA AIKO;OKADA OSAMU;WAKABAYASHI TAKESHI;MIHARA ICHIRO |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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