发明名称 Recycling charges
摘要 A circuit includes a first node; a second node; a first PMOS transistor having a source coupled to the first node, a drain coupled to a first control transistor, and a gate driven by a first voltage; and a first NMOS transistor having a source coupled to the second node, a drain coupled to the first control transistor, and a gate driven by a second voltage. The first PMOS transistor is configured to automatically turn off based on the first voltage and a first node voltage at the first node. The first NMOS transistor is configured to automatically turn off based on the second voltage and a second node voltage at the second node. When the first PMOS transistor, the control transistor, and the first NMOS transistor are on, the first node voltage is lowered while the second voltage is raised.
申请公布号 US8587991(B2) 申请公布日期 2013.11.19
申请号 US201213429082 申请日期 2012.03.23
申请人 KIM YOUNG SEOG;HSU KUOYUAN (PETER);TAO DEREK C.;KIM YOUNG SUK;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 KIM YOUNG SEOG;HSU KUOYUAN (PETER);TAO DEREK C.;KIM YOUNG SUK
分类号 G11C11/00;G11C5/14;G11C7/00 主分类号 G11C11/00
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