| 摘要 |
Disclosed herein is a semiconductor laser element including: on a substrate, a laser structure section configured to include a semiconductor laminated structure having an n-type semiconductor layer, active layer and p-type semiconductor layer in this order, and a p-side electrode on top of the p-type semiconductor layer; a pair of resonator edges provided on two opposed lateral sides of the semiconductor laminated structure; and films made of a non-metallic material having a thermal conductivity higher than that of surrounding gas, and provided in the region of the top side of the laser structure section including the positions of the resonator edges.
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